2024-03-19T09:38:31Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/193362017-02-27T16:48:20Zcom_10261_36com_10261_4col_10261_289
00925njm 22002777a 4500
dc
Ripalda, José María
author
Granados, Daniel
author
González Díez, Yolanda
author
Sánchez, A. M.
author
Molina, Sergio I.
author
García Martínez, Jorge Manuel
author
2005-11-09
Room temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.
Applied Physics Letters 87, 202108 (2005)
0003-6951
http://hdl.handle.net/10261/19336
10.1063/1.2130529
Gallium arsenide
Indium compounds
III-V semiconductors
Photoluminescence
Semiconductor quantum dots
Semiconductor quantum wells
Red shift
Transmission electron microscopy
Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb