2024-03-28T18:28:36Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1232922018-04-25T13:21:07Zcom_10261_119com_10261_4col_10261_498
00925njm 22002777a 4500
dc
García-Hernández, M.
author
Ferrer, F. J.
author
2013
Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
9th Spanish Conference on Electron Devices (2013)
http://hdl.handle.net/10261/123292
http://dx.doi.org/10.13039/501100002911
http://dx.doi.org/10.13039/501100004837
http://dx.doi.org/10.13039/501100003759
http://dx.doi.org/10.13039/100012818
Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells