2024-03-28T08:25:19Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/2209622020-10-09T01:14:49Zcom_10261_115com_10261_3col_10261_368
2020-10-08T07:28:07Z
urn:hdl:10261/220962
Formation of the magnetic order in three-dimensional topological insulators for the quantum anomalous hall effect (scientific summary)
Men'shov, V. N.
Shvets, I. A.
Chulkov, Eugene V.
Russian Science Foundation
Saint Petersburg State University
Tomsk State University
Russian Foundation for Basic Research
The topical problem of realization of the proper transverse conductivity in magnetic heterostructures based on topological insulators has been discussed. Our recent theoretical studies developing a universal approach to analytically simulate the quantum anomalous Hall effect at various ways for introducing a magnetic order into a topological insulator film have been briefly reviewed. Our model involves a consistent description of electronic states of the system, which determine the quantum anomalous Hall effect, with the reduction of the dimension from three-dimensional bulk through two-dimensional interface to one-dimensional edge. This makes it possible to emphasize the particular role of physical boundaries such as interfaces and side faces for spin-dependent transport in heterostructures. A number of new results recently obtained within the proposed approach have been reported. The data of recent experiments with new magnetic materials and structures have been discussed in terms of our theoretical results.
2020-10-08T07:28:07Z
2020-10-08T07:28:07Z
2019
artículo
JETP Letters 110: 771–784 (2019)
1530-6984
http://hdl.handle.net/10261/220962
10.1134/S002136401924007X
1530-6992
http://dx.doi.org/10.13039/501100006769
http://dx.doi.org/10.13039/501100004285
http://dx.doi.org/10.13039/501100008566
http://dx.doi.org/10.13039/501100002261
eng
https://doi.org/10.1134/S002136401924007X
Sí
closedAccess
Springer Nature