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RightsPreviewIssue DateTitleAuthor(s)Type
openAccessAnisotropic magnetoresistance.pdf.jpg2014Anisotropic magnetoresistance in an antiferromagnetic semiconductorFina, Ignasi ; Martí, Xavier; Fontcuberta, Josep ; Ramesh, Ramamoorthyartículo
openAccessMengdi_AdvElectrMat_2019_posprint.pdf.jpgJan-2019Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel JunctionsMengdi, Qian; Fina, Ignasi ; Sánchez Barrera, Florencio ; Fontcuberta, Josep artículo
openAccessMachado_ChemMater_2019_postprint.pdf.jpg16-Jan-2019Band gap tuning of solution processed ferroelectric perovskite BiFe1-xCoxO3 thin filmsMachado, Pamela; Scigaj, Mateusz ; Gázquez, Jaume ; Rueda, Estel; Sánchez Díaz, Antonio; Fina, Ignasi ; Gibert Roca, Martí; Puig Molina, Teresa ; Obradors, Xavier ; Campoy Quiles, Mariano  ; Coll, Mariona artículo
openAccessBand_Gap_Tuning_Solution-.pdf.jpg6-Jun-2019Band gap tuning of solution-processed ferroelectric perovskite BiFe1-xCoxO3 thin filmsMachado, Pamela; Scigaj, Mateusz ; Gazquez, Jaume; Rueda, Estel; Sánchez-Díaz, A.; Fina, Ignasi ; Gibert Roca, Martí; Puig Molina, Teresa ; Obradors, Xavier ; Campoy Quiles, Mariano ; Coll, Mariona artículo
embargoedAccessSulzbach_AdvFunctMat_2020_postprint.pdf.jpg7-Aug-2020Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel DevicesSulzbach, Milena Cervo; Estandía, Saúl; Gázquez, Jaume ; Sánchez Barrera, Florencio ; Fina, Ignasi ; Fontcuberta, Josep artículo
openAccessMengdi_Small_2019_postprint.pdf.jpg15-Mar-2019Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel JunctionsMengdi, Qian; Fina, Ignasi ; Sánchez Barrera, Florencio ; Fontcuberta, Josep artículo
openAccessJike_ACSAMI_2018_postprint.pdf.jpg9-Jul-2018Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on SiliconLyu, Jike; Estandía, Saúl; Gázquez, Jaume ; Chisholm, Matthew F.; Fina, Ignasi ; Dix, Nico ; Fontcuberta, Josep ; Sánchez Barrera, Florencio artículo
openAccessLiu_ACSApplMatInt_2018_postprint.pdf.jpg18-Jul-2018Control of the Polarization of Ferroelectric Capacitors by the Concurrent Action of Light and AdsorbatesFanmao Liu; Fina, Ignasi ; Sauthier, Guillaume ; Sánchez Barrera, Florencio ; Rappe, Andrew M.; Fontcuberta, Josep artículo
openAccessEstandia_JMatChemC_2021_suppl_editorial.pdf.jpg30-Jan-2021Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin FilmsEstandía, Saúl; Gázquez, Jaume ; Varela, María; Dix, Nico ; Qian, Mengdi; Solanas, Raul ; Fina, Ignasi ; Sánchez Barrera, Florencio artículo
embargoedAccessTurchenko_JAllComp_2020_postprint.pdf.jpg25-Apr-2020Crystal and magnetic structures, magnetic and ferroelectric properties of strontium ferrite partially substituted with In ionsTurchenko, Vitalii; Kostishyn, V. G.; Trukhanov, Sergei; Damay, Francoise; Porcher, Florence; Balasoiu, Maria; Lupu, Nicoleta; Bozzo, Bernat ; Fina, Ignasi ; Trukhanov, Alex; Waliszewski, Janusz; Recko, Katarzyna; Polosan, Silviuartículo
openAccessCoy_ApplPhysLett_2016_postprint.pdf.jpg10-Oct-2016Dielectric characterization of multiferroic magnetoelectric double-perovskite Y(Ni0.5Mn0.5)O3 thin filmsCoy, L. E.; Fina, Ignasi ; Ventura Altozano, Jofre; Yate, L.; Langenberg, Eric; Polo, Mª. del Carmen; Ferrater Martorell, César; Varela, M.artículo
openAccessGonzalez_ACSApplElectrMat_2019_postprint.pdf.jpg24-Sep-2019Direct reversible magnetoelectric coupling in ferroelectric/ferromagnetic structure controlled by series resistance engineeringGonzález Casal, Sergio; Fina, Ignasi ; Sánchez Barrera, Florencio ; Fontcuberta, Josep artículo
openAccessFoerster_JPhysCondMatt_2019_postprint.pdf.jpg27-Feb-2019Disclosing odd symmetry, strain driven magnetic response of Co on Pt/PMN-PT (0 1 1)Foerster, Michael; Fina, Ignasi ; Finizio, Simone; Casals, Blai ; Mandziak, Anna; Fauth, Francois; Aballe, Luciaartículo
openAccessFilippone_PhysRevMat_2020_editorial.pdf.jpg8-Sep-2020Discovery of highly polarizable semiconductors BaZrS3 and Ba3Zr2S7Filippone, Stephen; Zhao, Boyang; Shanyuan Niu,; Koocher, Nathan Z.; Silevitch, Daniel; Fina, Ignasi ; Rondinelli, James M.; Ravichandran, Jayakanth; Jaramillo, Richard artículo
openAccessMenendez_PhysRevAppl_2019_editorial.pdf.jpg23-Jul-2019Disentangling Highly Asymmetric Magnetoelectric Effects in Engineered Multiferroic HeterostructuresMenéndez, Enric ; Sireus, Veronica; Quintana, Alberto; Fina, Ignasi ; Casals, Blai ; Cichelero, Rafael ; Kataja, Mikko; Stengel, Massimiliano ; Herranz, Gervasi ; Catalán, Gustau ; Baró, Maria Dolors; Suriñach, Santiago; Sort, Jordiartículo
embargoedAccessEstandia_CrystGrowDes_2020_postprint.pdf.jpg1-May-2020Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)Estandía, Saúl; Dix, Nico ; Chisholm, Matthew F.; Fina, Ignasi ; Sánchez Barrera, Florencio artículo
openAccessFina_ACSAMI_2017_postprint.pdf.jpg10-May-2017Electric-Field-Adjustable Time-Dependent Magnetoelectric Response in Martensitic FeRh AlloyFina, Ignasi ; Quintana, Alberto; Padilla Pantoja, Jessica; Martí, Xavier; Macià, Ferran ; Sánchez Barrera, Florencio ; Foerster, Michael; Aballe, Lucía; Fontcuberta, Josep ; Sort Viñas, Jordiartículo
openAccessEstandia_ACSAEM-2019-postprint.pdf.jpg27-Aug-2019Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial StressEstandía, Saúl; Dix, Nico ; Gázquez, Jaume ; Fina, Ignasi ; Lyu, Jike; Chisholm, Matthew F.; Fontcuberta, Josep ; Sánchez Barrera, Florencio artículo
closedAccessaccesoRestringido.pdf.jpg12-Oct-2020Engineering Polar Oxynitrides: Hexagonal Perovskite BaWON2Oró, Judith ; Fina, Ignasi ; Frontera, Carlos ; Gázquez, Jaume ; Ritter, Clemens; Cunquero, Marina; Loza Alvarez, Pablo; Conejeros, Sergio; Alemany, Pere; Canadell, Enric ; Fontcuberta, Josep ; Fuertes, Amparo artículo
openAccessLyu_ApplPhysLett_2019_editorial.pdf.jpg3-Jun-2019Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templatesLyu, Jike; Fina, Ignasi ; Bachelet, R.; Saint-Girons, G.; Estandía, Saúl; Gázquez, Jaume ; Fontcuberta, Josep ; Sánchez Barrera, Florencio artículo