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Mostrando resultados 1 a 11 de 11
DerechosPreviewFecha Public.TítuloAutor(es)Tipo
openAccessManuscript_#SSE-D-11-00531_revised_version_with_all_changes_accepted_vfinal.pdf.jpg20132 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O <inf>3</inf>, HfO<inf>2</inf> and nanolaminated dielectricsRafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID ; Ohyama, H.; Takakura, K.; Tsunoda, I.; Zabala, Miguel; Beldarrain, O.; González, M. B.; García, H.; Castán, H.; Gómez, A.; Dueñas, S.artículo
openAccessMR-D-13-00242R1-2_pagines_rellevants.pdf.jpg20132 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al<inf>2</inf>O<inf>3</inf> dielectrics of different thicknessRafí, J. M. CSIC ORCID ; González, M. B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID artículo
closedAccessaccesoRestringido.pdf.jpg9-jun-2014Analysis of the temperature dependence of the switching variability in Ni/HfO2-based RRAM devicesGonzález, M. B.; Rafí, J. M. CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Campabadal, Francesca CSIC ORCID comunicación de congreso
openAccessBlistering of ALD.pdf.jpg28-sep-2015Blistering of ALD Al2O3 films in Al-Al2O3-Si structuresCampabadal, Francesca CSIC ORCID ; Acero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Duch, M.; Zabala, Miguel; González, M. B.póster de congreso
openAccessComparison between Al2O3 thin films grown by ALD.pdf.jpg8-feb-2011Comparison between Al2O3 thin films grown by ALD using H2O or O3 as oxidant sourceCampabadal, Francesca CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Acero Leal, María Cruz CSIC ORCID ; Rafí, J. M. CSIC ORCID comunicación de congreso
openAccessManuscript_#JES-10-0845R1_3rd_revision_vfinal.pdf.jpg2011Deposition temperature and thermal annealing effects on the electrical characteristics of atomic layer deposited Al<inf>2</inf>O<inf>3</inf> films on siliconRafí, J. M. CSIC ORCID ; Zabala, Miguel; Beldarrain, O.; Campabadal, Francesca CSIC ORCID artículo
openAccessEffect of the blistering of ALD Al2O3 films on the silicon.pdf.jpg11-feb-2015Effect of the blistering of ALD Al2O3 films on the silicon surface in Al-Al2O3-Si structuresAcero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Duch, M.; Zabala, Miguel; González, M. B.; Campabadal, Francesca CSIC ORCID póster de congreso
openAccess1.4768167.pdf.jpg2013Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealingGarcía, H.; Castán, H.; Dueñas, S.; Bailón, L.; Campabadal, Francesca CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; González, M. B.; Rafí, J. M. CSIC ORCID artículo
openAccessManuscript_#SSE-D-13-00195_revised_vfinal.pdf.jpg2013Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al<inf>2</inf>O<inf>3</inf>, HfO<inf>2</inf> and nanolaminated dielectricsRafí, J. M. CSIC ORCID ; González, M. B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID artículo
openAccess11-feb-2015Investigation of the resistive switching behavior in Ni/HfO2-based RRAM devicesGonzález, M. B.; Acero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID comunicación de congreso
openAccess19-sep-2011Ultra-thin ALD layers of HfO2 for silicon micromachiningDuch, M.; Gerbolés, Marta; Acero Leal, María Cruz CSIC ORCID ; Beldarrain, O.; Zabala, Miguel; Campabadal, Francesca CSIC ORCID póster de congreso