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openAccessWO2020109641A1.pdf.jpg4-jun-2020Field-effect transistor (MOSFET) and method for manufacturing sameLloret Vieira, Fernando; Araujo Gay, Daniel; Godignon, Philippe; Eon, David; Pernot, Julien; Bustarret, Etiennesolicitud de patente
openAccessAdv Funct Materials - 2017 - Hébert - Flexible Graphene Solution‐Gated Field‐Effect Transistors Efficient Transducers for.pdf.jpg21-mar-2018Flexible Graphene Solution-Gated Field-Effect Transistors: Efficient Transducers for Micro-ElectrocorticographyHébert, Clement CSIC ORCID; Masvidal Codina, Eduard CSIC ORCID ; Suarez-Perez, Alejandro; Calia, Andrea Bonaccini; Piret, Gaelle; Garcia-Cortadella, Ramon; Illa, Xavi; Del Corro Garcia, Elena; De la Cruz Sanchez, Jose M.; Casals, Damia Viana; Prats-Alfonso, Elisabet; Bousquet, Jessica CSIC; Godignon, Philippe; Yvert, Blaise; Villa, Rosa CSIC ORCID ; Sanchez-Vives, Maria V.; Guimerà-Brunet, Anton CSIC ORCID; Garrido, Jose A. CSIC ORCIDartículo
openAccessARTICULOS13303[1].pdf.jpg2009GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modelingPérez-Tomás, A.; Placidi, A.; Perpiñà, X.; Constant, A.; Godignon, Philippe; Jordà, Xavier; Brosselard, P.; Millán, Joséartículo
openAccessARTICULOS13282[1].pdf.jpgdic-2004Heat power source controller circuitMadrid, Francesc CSIC; Jordà, Xavier; Vellvehi Hernández, Miquel; Perpiñà, X.; Godignon, Philippeartículo
closedAccessaccesoRestringido.pdf.jpg2016High electron mobility and low-field quantum hall effect in graphene grown on SiC substrates ready for back gatingGodignon, Philippe; Ballestar, A.; García-García, A.; Serrano-Ramón, Luis CSIC; Teresa, José María de CSIC ORCID ; Ibarra, M. Ricardo CSIC ORCIDcomunicación de congreso
openAccessPost-print-High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors_MAIN_TEXT.pdf.jpg31-dic-2018High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistorsMasvidal Codina, Eduard CSIC ORCID ; Illa, Xavi; Dasilva, Miguel; Bonaccini Calia, Andrea CSIC ORCID; Dragojević, Tanja; Vidal Rosas, Ernesto E.; Prats Alfonso, Elisabet CSIC ORCID; Martínez Aguilar, Javier; Cruz, Jose Manuel de la CSIC ORCID; Garcia Cortadella, Ramon CSIC ORCID; Godignon, Philippe; Rius, Gemma CSIC ORCID ; Camassa, Alessandra; Del Corro, Elena; Bousquet, Jessica CSIC; Hébert, Clement CSIC ORCID; Durduran, Turgut; Villa, Rosa CSIC ORCID ; Sánchez-Vives, María V. CSIC ORCID; Garrido, Jose A. CSIC ORCID; Guimerà-Brunet, Anton CSIC ORCIDartículo
openAccess2022How to resist extreme temperatures: a new semiconductor flying to MercuryGodignon, Philippesonido
closedAccess2004Internal infrared laser deflection system: a tool for power device characterizationPerpiñà, X.; Jordà, Xavier; Mestres, Narcís CSIC ORCID ; Vellvehi Hernández, Miquel; Godignon, Philippe; Millán, José; Kiedrowski, H. vonartículo
openAccessWO2007122281A1.pdf.jpg1-nov-2007Interruptor de potencia bidireccional, inteligente y modular, método y realizaciónJordà, Xavier; Gálvez Sánchez, José Luis CSIC ORCID; Vellvehi Hernández, Miquel; Godignon, Philippe; José Prieto, Miguel Ángel; Martín Ramos, Juan Antoniopatente
openAccess2317731_B1.pdf.jpg4-feb-2010Interruptor de potencia bidireccional, inteligente y modular. Método y realizaciónJordà, Xavier; Gálvez Sánchez, José Luis CSIC ORCID; Vellvehi Hernández, Miquel; Godignon, Philippe; José Prieto, Miguel Ángel; Martín Ramos, Juan Antoniopatente
openAccessPhysRevB.80.125410.pdf.jpg23-dic-2008Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)Camara, Nicolas; Rius, Gemma CSIC ORCID ; J-R. Huntzinger; Tiberj, Antoine; Mestres, Narcís CSIC ORCID ; Perez Murano, Francesc X. CSIC ORCID ; Godignon, Philippe; Camassel, Jeanartículo
closedAccessnov-2010Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafersVellvehi Hernández, Miquel; Gálvez Sánchez, José Luis CSIC ORCID; Perpiñá Giribet, Xavier; Jordà, Xavier; Godignon, Philippe; Millán, Joséartículo
openAccessTNS3307932.pdf.jpg1-oct-2023Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation DetectorsRafí, J. M. CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Godignon, Philippe; Rius, Gemma CSIC ORCID ; Dauderys, Vainius; Tsunoda, Isao; Yoneoka, Masashi; Takakura, Kenichiro; Kramberger, Gregor; Moll, Michaelartículo
closedAccess2010Massive manufacture and characterization of single-walled carbon nanotube field effect transistorsMartín-Fernández, I.; Sansa Perna, Marc; Esplandiú, María J. CSIC ORCID; Lora-Tamayo D’Ocón, Emilio; Perez Murano, Francesc X. CSIC ORCID ; Godignon, Philippeartículo
closedAccessaccesoRestringido.pdf.jpg7-ago-2013Membraneless glucose/O2 microfluidic enzymatic biofuel cell using pyrolyzed photoresist film electrodesGonzález-Guerrero, Maria José; Esquivel Bojórquez, Juan Pablo CSIC ORCID ; Sánchez-Molas, David; Godignon, Philippe; Muñoz, Francesc Xavier; del Campo, F Javier; Giroud, Fabien; Minteer, Shelley D; Sabaté Vizcarra, María Neus CSIC ORCID artículo
openAccessEP3564186A1.pdf.jpg6-nov-2019Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrateRius, Gemma CSIC ORCID ; Godignon, Philippe; Villa, Rosa CSIC ORCID ; Prats Alfonso, Elisabet CSIC ORCIDsolicitud de patente
openAccessUS2020031675A1.pdf.jpg30-ene-2021Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrateRius, Gemma CSIC ORCID ; Godignon, Philippe; Villa, Rosa CSIC ORCID ; Prats Alfonso, Elisabet CSIC ORCIDsolicitud de patente
openAccessWO2018122433A1.pdf.jpg5-jul-2018Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrateRius, Gemma CSIC ORCID ; Godignon, Philippe; Villa, Rosa CSIC ORCID ; Prats Alfonso, Elisabet CSIC ORCIDsolicitud de patente
openAccessWO2009115630A1.pdf.jpg24-sep-2009Method for producing RB-IGBT devicesVellvehi Hernández, Miquel; Jordà, Xavier; Gálvez Sánchez, José Luis CSIC ORCID; Godignon, Philippe; Perpiñá Giribet, Xavierpatente
openAccessUS9356113B2.pdf.jpg31-may-2016Method of producing a junction field-effect transistor (JFET)Tournier, Dominique; Chevalier, Florian; Godignon, Philippe; Millán, Josésolicitud de patente