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Browsing by Author Briones Fernández-Pola, Fernando

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RightsIssue DateTitleAuthor(s)
openAccess13-Mar-2002In situ measurements of As/P exchange during InAs/InP(0 0 1) quantum wires growthGonzález Sagardoy, María Ujué; García Martínez, Jorge Manuel; González Sotos, Luisa; Silveira, Juan Pedro; González Díez, Yolanda; Gómez, J. D.; Briones Fernández-Pola, Fernando
closedAccessMay-1999In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compoundsSilveira, Juan Pedro; Briones Fernández-Pola, Fernando
openAccess15-Jan-1998In situ observation of surface optical anisotropy on InP, InAs, and InSb by chemical modulation spectroscopyPostigo, Pablo Aitor; Armelles Reig, Gaspar; Utzmeier, T.; Briones Fernández-Pola, Fernando
openAccess1-Jan-1998In situ optical spectroscopy of Ga dimers on GaP, GaAs and GaSb by surface chemical modulationPostigo, Pablo Aitor; Armelles Reig, Gaspar; Utzmeier, T.; Briones Fernández-Pola, Fernando
closedAccess1991In Situ Reflectance Anysotropy Monitoring of Antiphase Domains Evolution during Growth of GaAs/Si (001)González Díez, Yolanda; González Sotos, Luisa; Briones Fernández-Pola, Fernando
closedAccessMay-1991In-situ monitoring of antiphase domain evolution during atomic layer MBE (ALMBE) and MBE growth of GaAs/Si(001) by reflectance differenceGonzález Díez, Yolanda; González Sotos, Luisa; Briones Fernández-Pola, Fernando
openAccessJul-2001InAs/InP(0 0 1) quantum wire formation due to anisotropic stress relaxation: in situ stress measurementsGarcía Martínez, Jorge Manuel; González Sotos, Luisa; González Sagardoy, María Ujué; Silveira, Juan Pedro; González Díez, Yolanda; Briones Fernández-Pola, Fernando
openAccess28-Feb-2000Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructuresGonzález Sotos, Luisa; García Martínez, Jorge Manuel; García García, Ricardo; Briones Fernández-Pola, Fernando; Martínez-Pastor, Juan; Ballesteros, C.
openAccessApr-1997The influence of the Pt buffer layer on the perpendicular magnetic anisotropy in epitaxial FePd(001) ordered alloys grown by sputteringCaro, P.; Cebollada, Alfonso; Ravelosona, D.; Briones Fernández-Pola, Fernando; García, D.; Vázquez, M.; Hernando, A.
closedAccessOct-1992Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBEGonzález Díez, Yolanda; González Sotos, Luisa; Briones Fernández-Pola, Fernando; Vilà, A.; Cornet, A.; Morante, J. R.
closedAccessMar-1995InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substratesDotor, María Luisa; Golmayo, Dolores; Calle Martín, Ana; Sendra, J. R.; Anguita, José Virgilio; González Sotos, Luisa; González Díez, Yolanda; Briones Fernández-Pola, Fernando
openAccess2010(InP)5/(Ga0.47In0.53As)5 superlattice confined 1.5 μm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxyDotor, María Luisa; Huertas, P.; Postigo, Pablo Aitor; Golmayo, Dolores; Briones Fernández-Pola, Fernando
openAccess3-Jun-2005Interface Double-Exchange Ferromagnetism in the Mn-Zn-O System: New Class of Biphase MagnetismGarcía, Miguel Ángel Pérez; Ruiz-González, María Luisa; Quesada, Adrián; Costa Krämer, José Luis; Fernández Lozano, José Francisco; Khatib, S. J.; Wennberg, A.; Caballero Cuesta, Amador; Martín-González, Marisol S.; Villegas, Marina, et al
closedAccess28-Mar-2003Interplay between size and shape in the magnetic behaviour of epitaxial microtunnel junction arraysMartín, J. I.; Costa Krämer, José Luis; Martínez Boubeta, C.; Cebollada, Alfonso; Briones Fernández-Pola, Fernando; Anguita, José Virgilio
closedAccess2-Nov-2000Large disparity between gallium and antimony self-diffusion in gallium antimonideBracht, H.; Nicols, S. P.; Walukiewicz, W.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando; Haller, E. E.
openAccess10-Sep-2001Large magnetoresistance in Fe/MgO/FeCo(001) epitaxial tunnel junctions on GaAs(001)Bowen, M.; Cros, V.; Petroff, F.; Fert, A.; Martínez Boubeta, C.; Costa Krämer, José Luis; Anguita, José Virgilio; Cebollada, Alfonso; Briones Fernández-Pola, Fernando; Teresa, José María de, et al
closedAccess13-Mar-2002Limited In incorporation during pseudomorphic InAs/GaAs growth and quantum dot formation observed by in situ stress measurementsSilveira, Juan Pedro; García Martínez, Jorge Manuel; Briones Fernández-Pola, Fernando
closedAccess1992Low Temperature GaAs/Si Technology: from Si Substrate Preparation to the Epitaxial GrowthGonzález Díez, Yolanda; González Sotos, Luisa; Briones Fernández-Pola, Fernando
openAccess1994Low temperature growth of highly doped GaAs:Si by atomic layer molecular beam epitaxySilveira, Juan Pedro; Briones Fernández-Pola, Fernando
closedAccessFeb-1994Low temperature InP/Si technology: from Si substrate preparation to epitaxial growthGonzález Sotos, Luisa; González Díez, Yolanda; Dotor, María Luisa; Golmayo, Dolores; Gómez, D.; Briones Fernández-Pola, Fernando