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Browsing by Author Briones Fernández-Pola, Fernando

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RightsPreviewIssue DateTitleAuthor(s)Type
closedAccessMay-2006Growth and characterization of Sn doped ZnO thin films by pulsed laser depositionLópez-Ponce, Enrique ; Costa Krämer, José Luis ; Martín-González, Marisol S. ; Briones Fernández-Pola, Fernando ; Fernández Lozano, José Francisco; Caballero Cuesta, Amador; Villegas, Marina; Frutos, José deArtículo
closedAccessaccesoRestringido.pdf.jpg1992Growth and characterization of ultrathin GaP layer in a GaAs matrix by X-ray interference effectMazuelas Esteban, Ángel José ; Tapfer, L.; Ruiz, A.; Briones Fernández-Pola, Fernando ; Ploog, K.Artículo
closedAccess31-Jan-1998HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined membranesAnguita, José Virgilio ; Briones Fernández-Pola, Fernando Artículo
closedAccessaccesoRestringido.pdf.jpg1994High-resolution electron microscopy and X-ray diffraction characterization of alternately strained (GaAs)n(GaP)m(GaAs)n(InP)m superlattices grown by Atomic Layer Molecular Beam Epitaxy.Ballesteros, C.; Gerthsen, D.; Mazuelas Esteban, Ángel José ; Ruiz, A.; Briones Fernández-Pola, Fernando Artículo
closedAccessJun-1991Hydrogen sensor based on a Pt/GaAs Schottky diodeLechuga, Laura M.; Calle Martín, Ana ; Golmayo, Dolores; Briones Fernández-Pola, Fernando Artículo
closedAccess1985Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE)Briones Fernández-Pola, Fernando ; Golmayo, Dolores; González Sotos, Luisa ; Miguel, José Luis deArtículo
closedAccessJan-2004In segregation effects during quantum dot and quantum ring formation on GaAs(001)García Martínez, Jorge Manuel ; Granados, Daniel ; Silveira, Juan Pedro ; Briones Fernández-Pola, Fernando Artículo
openAccesspaper in situ.pdf.jpg13-Mar-2002In situ measurements of As/P exchange during InAs/InP(0 0 1) quantum wires growthGonzález Sagardoy, María Ujué ; García Martínez, Jorge Manuel ; González Sotos, Luisa ; Silveira, Juan Pedro ; González Díez, Yolanda ; Gómez, J. D.; Briones Fernández-Pola, Fernando Comunicación de congreso
closedAccessMay-1999In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compoundsSilveira, Juan Pedro ; Briones Fernández-Pola, Fernando Artículo
openAccessPhysRevB.57.1362.pdf.jpg15-Jan-1998In situ observation of surface optical anisotropy on InP, InAs, and InSb by chemical modulation spectroscopyPostigo, Pablo Aitor ; Armelles Reig, Gaspar ; Utzmeier, T.; Briones Fernández-Pola, Fernando Artículo
openAccessin situ.pdf.jpg1-Jan-1998In situ optical spectroscopy of Ga dimers on GaP, GaAs and GaSb by surface chemical modulationPostigo, Pablo Aitor ; Armelles Reig, Gaspar ; Utzmeier, T.; Briones Fernández-Pola, Fernando Artículo
closedAccess1991In Situ Reflectance Anysotropy Monitoring of Antiphase Domains Evolution during Growth of GaAs/Si (001)González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando Artículo
closedAccessMay-1991In-situ monitoring of antiphase domain evolution during atomic layer MBE (ALMBE) and MBE growth of GaAs/Si(001) by reflectance differenceGonzález Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando Artículo
openAccessj_crystal_growth_227_975_2001.pdf.jpgJul-2001InAs/InP(0 0 1) quantum wire formation due to anisotropic stress relaxation: in situ stress measurementsGarcía Martínez, Jorge Manuel ; González Sotos, Luisa ; González Sagardoy, María Ujué ; Silveira, Juan Pedro ; González Díez, Yolanda ; Briones Fernández-Pola, Fernando Pre-print
openAccessGetPDFServlet.pdf.jpg28-Feb-2000Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructuresGonzález Sotos, Luisa ; García Martínez, Jorge Manuel ; García García, Ricardo; Briones Fernández-Pola, Fernando ; Martínez-Pastor, Juan; Ballesteros, C.Artículo
openAccessinfluence.pdf.jpgApr-1997The influence of the Pt buffer layer on the perpendicular magnetic anisotropy in epitaxial FePd(001) ordered alloys grown by sputteringCaro, P.; Cebollada, Alfonso ; Ravelosona, D.; Briones Fernández-Pola, Fernando ; García, D.; Vázquez, M.; Hernando, A.Artículo
closedAccessOct-1992Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBEGonzález Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; Vilà, A.; Cornet, A.; Morante, J. R.Artículo
closedAccessMar-1995InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substratesDotor, María Luisa ; Golmayo, Dolores; Calle Martín, Ana ; Sendra, J. R.; Anguita, José Virgilio ; González Sotos, Luisa ; González Díez, Yolanda ; Briones Fernández-Pola, Fernando Artículo
openAccessInP.pdf.jpg2010(InP)5/(Ga0.47In0.53As)5 superlattice confined 1.5 μm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxyDotor, María Luisa ; Huertas, P.; Postigo, Pablo Aitor ; Golmayo, Dolores; Briones Fernández-Pola, Fernando Artículo
openAccessGarcía, M.A. et al Phys. Rev. Lett._94_2005.pdf.jpg3-Jun-2005Interface Double-Exchange Ferromagnetism in the Mn-Zn-O System: New Class of Biphase MagnetismGarcía, Miguel Ángel Pérez; Ruiz-González, María Luisa; Quesada, Adrián; Costa Krämer, José Luis ; Fernández Lozano, José Francisco; Khatib, S. J.; Wennberg, A.; Caballero Cuesta, Amador; Martín-González, Marisol S. ; Villegas, Marina; Briones Fernández-Pola, Fernando ; González-Calbet, José M.; Hernando, AntonioArtículo