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Browsing by Author Briones Fernández-Pola, Fernando

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Showing results 76 to 95 of 221
Issue DateTitleAuthor(s)Type
1992Growth and characterization of AlAs/InAs superlattices on {100}, {211} and {311} GaAs substratesCastrillo, P.; Armelles Reig, Gaspar; Domínguez, P. S.; Meléndez, J.; Briones Fernández-Pola, Fernando; Ploog, K.Artículo
1996Growth and characterization of InSb/InP short-period strained-layer superlattices grown by ALMBEUtzmeier, T.; Armelles Reig, Gaspar; Postigo, Pablo Aitor; Briones Fernández-Pola, FernandoArtículo
1-May-1997Growth and characterization of self-organized InSb quantum dots and quantum dashesUtzmeier, T.; Tamayo, Javier; Postigo, Pablo Aitor; García García, Ricardo; Briones Fernández-Pola, FernandoArtículo
May-2006Growth and characterization of Sn doped ZnO thin films by pulsed laser depositionLópez-Ponce, E.; Costa Krämer, José Luis; Martín-González, Marisol S.; Briones Fernández-Pola, Fernando; Fernández Lozano, José Francisco; Caballero Cuesta, Amador; Villegas, Marina; Frutos, J. deArtículo
1992Growth and characterization of ultrathin GaP layer in a GaAs matrix by X-ray interference effectMazuelas, A.; Tapfer, L.; Ruiz, A.; Briones Fernández-Pola, Fernando; Ploog, K.Artículo
31-Jan-1998HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined membranesAnguita, José Virgilio; Briones Fernández-Pola, FernandoArtículo
1994High-resolution electron microscopy and X-ray diffraction characterization of alternately strained (GaAs)n(GaP)m(GaAs)n(InP)m superlattices grown by Atomic Layer Molecular Beam Epitaxy.Ballesteros, C.; Gerthsen, D.; Mazuelas, A.; Ruiz, A.; Briones Fernández-Pola, FernandoArtículo
Jun-1991Hydrogen sensor based on a Pt/GaAs Schottky diodeLechuga, Laura M.; Calle Martín, Ana; Golmayo, Dolores; Briones Fernández-Pola, FernandoArtículo
1985Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE)Briones Fernández-Pola, Fernando; Golmayo, Dolores; González, Luisa; Miguel, José Luis deArtículo
Jan-2004In segregation effects during quantum dot and quantum ring formation on GaAs(001)García, Jorge M.; Granados, Daniel; Silveira, Juan Pedro; Briones Fernández-Pola, FernandoArtículo
13-Mar-2002In situ measurements of As/P exchange during InAs/InP(0 0 1) quantum wires growthGonzález, María Ujué; García, Jorge M.; González, Luisa; Silveira, Juan Pedro; González, Yolanda; Gómez, J. D.; Briones Fernández-Pola, FernandoComunicación de congreso
May-1999In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compoundsSilveira, Juan Pedro; Briones Fernández-Pola, FernandoArtículo
15-Jan-1998In situ observation of surface optical anisotropy on InP, InAs, and InSb by chemical modulation spectroscopyPostigo, Pablo Aitor; Armelles Reig, Gaspar; Utzmeier, T.; Briones Fernández-Pola, FernandoArtículo
1-Jan-1998In situ optical spectroscopy of Ga dimers on GaP, GaAs and GaSb by surface chemical modulationPostigo, Pablo Aitor; Armelles Reig, Gaspar; Utzmeier, T.; Briones Fernández-Pola, FernandoArtículo
1991In Situ Reflectance Anysotropy Monitoring of Antiphase Domains Evolution during Growth of GaAs/Si (001)González, Yolanda; González, Luisa; Briones Fernández-Pola, FernandoArtículo
May-1991In-situ monitoring of antiphase domain evolution during atomic layer MBE (ALMBE) and MBE growth of GaAs/Si(001) by reflectance differenceGonzález, Yolanda; González, Luisa; Briones Fernández-Pola, FernandoArtículo
Jul-2001InAs/InP(0 0 1) quantum wire formation due to anisotropic stress relaxation: in situ stress measurementsGarcía, Jorge M.; González, Luisa; González, María Ujué; Silveira, Juan Pedro; González, Yolanda; Briones Fernández-Pola, FernandoPre-print
28-Feb-2000Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructuresGonzález, Luisa; García, Jorge M.; García García, Ricardo; Briones Fernández-Pola, Fernando; Martínez-Pastor, Juan; Ballesteros, C.Artículo
Apr-1997The influence of the Pt buffer layer on the perpendicular magnetic anisotropy in epitaxial FePd(001) ordered alloys grown by sputteringCaro, P.; Cebollada, Alfonso; Ravelosona, D.; Briones Fernández-Pola, Fernando; García, D.; Vázquez, M.; Hernando, A.Artículo
Oct-1992Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBEGonzález, Yolanda; González, Luisa; Briones Fernández-Pola, Fernando; Vilà, A.; Cornet, A.; Morante, J. R.Artículo

Showing results 76 to 95 of 221