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openAccessCusco 2012 ApplPhysLett_101_062103.pdf.jpg2012Brillouin scattering determination of the surface acoustic wave velocity in In xGa 1-xN: A probe into the elastic constantsJiménez Riobóo, R. J. ; Cuscó, Ramón  ; Oliva, Ramón; Domènech-Amador, Núria ; Prieto, C. ; Ibáñez Insa, Jordi  ; Boney, C.; Bensaoula, A.; Artús, Lluís  Artículo
openAccessGetPDFServlet.pdf.jpg1-Dec-2000Comparison of Raman-scattering and Shubnikov–de Haas measurements to determine charge density in doped semiconductorsCuscó, Ramón  ; Artús, Lluís  ; Ibáñez Insa, Jordi  ; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R.Artículo
openAccessIbañez Insa 2014 Journal of Applied Physics 115.pdf.jpg2014Determining the crystalline degree of silicon nanoclusters/SiO2 multilayers by Raman scatteringHernández, S.; López-Vidrier, J.; López-Conesa, L.; Hiller, D.; Gutsch, S.; Ibáñez Insa, Jordi  ; Estradé, S.; Peiró, F.; Zacharias, M.; Garrido, B.Artículo
closedAccessJan-2009Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates: a Raman-scattering studyIbáñez Insa, Jordi  ; Alarcón-Lladó, Esther ; Cuscó, Ramón  ; Artús, Lluís  ; Henini, Mohamed; Hopkinson, MarkArtículo
openAccessJApplPhys_103_103528.pdf.jpgAug-2008Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scatteringIbáñez Insa, Jordi  ; Cuscó, Ramón  ; Alarcón-Lladó, Esther ; Artús, Lluís  ; Patanè, A.; Fowler, D.; Eaves, L.; Uesugi, K.; Suemune, I.Artículo
openAccessJApplPhys_104_033544.pdf.jpgJul-2008Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxyIbáñez Insa, Jordi  ; Hernández, S.; Alarcón-Lladó, Esther ; Cuscó, Ramón  ; Artús, Lluís  ; Novikov, S. V.; Foxon, C. T.Artículo
closedAccessaccesoRestringido.pdf.jpg2012Heat Alteration of the Blue Pigment Aerinite: Application to Sixena¿s Romanesque FrescoesIbáñez Insa, Jordi  ; Oriols, Núria; Elvira, Josep  ; Alvarez Pousa, Soledad  ; Plana Llevat, FelicianoArtículo
openAccessCusco_physical_review_b_2013_88_115202.pdf.jpg2013High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopyIbáñez Insa, Jordi  ; Oliva, Ramón; Manjón, F. J.; Segura, A.; Yamaguchi, T.; Nanishi, Y.; Cuscó, Ramón  ; Artús, Lluís  Artículo
openAccessIbañez 2012 Phys Rev B 86 035210.pdf.jpgJul-2012High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InNIbáñez Insa, Jordi  ; Segura, A.; García-Domene, B.; Oliva, Ramón; Manjón, F. J.; Yamaguchi, T.; Nanishi, Y.; Artús, Lluís  Artículo
openAccessOliva 2014 Applied Physics Letters 104 142101.pdf.jpgApr-2014High-pressure Raman scattering in InGaN heteroepitaxial layers: Effect of the substrate on the phonon pressure coefficientsOliva, Ramón; Ibáñez Insa, Jordi  ; Cuscó, Ramón  ; Dadgar, A.; Krost, A.; Gandhi, J.; Bensaoula, A.; Artús, Lluís  Artículo
openAccessOliva 2013 Journal of Applied Physics 113.pdf.jpg2013High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxyOliva, Ramón; Ibáñez Insa, Jordi  ; Artús, Lluís  ; Cuscó, Ramón  ; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.Artículo
closedAccessaccesoRestringido.pdf.jpg2012Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layerValdueza-Felip, S.; Ibáñez Insa, Jordi  ; Monroy, E.; González-Herráez, M.; Artús, Lluís  ; Naranjo, F.B.Artículo
openAccess2009 Artus JApplPhys_106_053510.pdf.jpgSep-2009Laser thermal annealing effects on single crystal gallium phosphidePastor, D.; Olea, Javier; Toledano-Luque, M.; Mártil, Ignacio; González-Díaz, G.; Ibáñez Insa, Jordi  ; Cuscó, Ramón  ; Artús, Lluís  Artículo
closedAccessJan-2009LO phonon–plasmon coupled modes and carrier mobilities in heavily Se-doped Ga(As, N) thin filmsIbáñez Insa, Jordi  ; Alarcón-Lladó, Esther ; Cuscó, Ramón  ; Artús, Lluís  ; Fowler, D.; Patanè, A.; Uesugi, K.; Suemune, I.Artículo
openAccessGetPDFServlet.pdf.jpg13-Nov-2006Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffractionIbáñez Insa, Jordi  ; Kudrawiec, R.; Misiewicz, J.; Schmidbauer, M.; Henini, Mohamed; Hopkinson, MarkArtículo
openAccessGetPDFServlet.pdf.jpg3-Jul-2007Optical phonon behavior in strain-free dilute Ga(As,N) studied by Raman scatteringIbáñez Insa, Jordi  ; Alarcón-Lladó, Esther ; Cuscó, Ramón  ; Artús, Lluís  ; Hopkinson, MarkArtículo
closedAccessApr-2008Phonons in Bx Ga1-x N/GaN epilayers studied by means of UV Raman scatteringCuscó, Ramón  ; Alarcón-Lladó, Esther ; Ibáñez Insa, Jordi  ; Artús, Lluís  ; Gautier, S.; Ougazzaden, A.Artículo
closedAccessOct-2009Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering studyCuscó, Ramón  ; Ibáñez Insa, Jordi  ; Alarcón-Lladó, Esther ; Artús, Lluís  ; Yamaguchi, T.; Nanishi, YasushiArtículo
openAccess2009 Artus Proceedings IEEE.pdf.jpgMar-2009Pulsed Laser Melting Effects on Single Crystal Gallium PhosphidePastor, D.; Olea, Javier; Toledano-Luque, M.; Mártil, Ignacio; González-Díaz, G.; Ibáñez Insa, Jordi  ; Cuscó, Ramón  ; Artús, Lluís  Artículo
openAccessIbañez 2013 Fuel 105 314versio postprint.pdf.jpg2013Quantitative Rietveld analysis of the crystalline and amorphous phases in coal fly ashesIbáñez Insa, Jordi  ; Font, Oriol; Moreno, N.; Elvira, Josep  ; Alvarez Pousa, Soledad  ; Querol, XavierArtículo